The invention relates to technical physics and can be used in electronics and microelectronics. Offers technique of semiconductor crystalline structure enhancement where the laser radiation heats the metal inclusions of the crystal volume to the melting point. As a result, the segregation of defects and annealing of impurities around metal inclusions take place.Inventive techniques applied to improve the manufacturing process of CdZnTe detector sensitive element or after the depreciation of detector add laser processing stage.