Impact of Laser Radiation on Microhardness of a Semiconductor

AIP Conference Proceedings: 30th International Conference on the Physics of Semiconductors (ICPS-30) 2011
Artūrs Medvids, Pāvels Onufrijevs, Giorgi Chiradze, Faina Muktupāvela

It was found that strongly absorbed Nd:YAG laser radiation leads to a non-monotonous dependence of microhardness of p- and n-type Si crystals on laser radiation. This dependence is characterized by two maxima for p-Si and one maximum for n-Si crystals. In both cases the increase of microhardness at higher laser intensity is explained by formation of mechanically compressed layer at the irradiated surface due to concentration of the interstitial atoms of Si at the surface in temperature gradient field. The decrease of the microhardness is explained by formation of nano-cones as a result of plastic deformation of the mechanically stressed layer. The additional maximum at lower laser intensity for p-Si crystal is explained by p-n type inversion of Si conductivity.

Keywords
Microhardness, laser radiation, Thermogradient effect, nano- cones
DOI
10.1063/1.3666315
Hyperlink
http://proceedings.aip.org/resource/2/apcpcs/1399/1/181_1?isAuthorized=no

Medvids, A., Onufrijevs, P., Chiradze, G., Muktupavela, F. Impact of Laser Radiation on Microhardness of a Semiconductor. In: AIP Conference Proceedings: 30th International Conference on the Physics of Semiconductors (ICPS-30), Korea Republic, Seoul, 25-30 July, 2010. Melville: American Institute of Physics, 2011, pp.181-182. ISBN 978-0-7354-1002-2. ISSN 0094-243X. e-ISSN 1551-7616. Available from: doi:10.1063/1.3666315

Publication language
English (en)