Mechanisms of P-N Junction Formation in I-Ge Crystal by Laser Radiation

International Conference on Extended Defects in Semiconductors (EDS-2012): Book of Abstracts 2012
Artūrs Medvids, Roberts Rimša, Pāvels Onufrijevs, Edvīns Daukšta, Gatis Mozoļevskis, Talivaldis Puritis

-

Keywords
p-n junction, i-Ge crystal, laser radiation

Medvids, A., Rimša, R., Onufrijevs, P., Daukšta, E., Mozoļevskis, G., Puritis, T. Mechanisms of P-N Junction Formation in I-Ge Crystal by Laser Radiation. In: International Conference on Extended Defects in Semiconductors (EDS-2012): Book of Abstracts, Greece, Thessaloniki, 24-29 June, 2012. Thessaloniki: 2012, pp.139-139.

Publication language
English (en)