Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon
Solid State Phenomena
2014
N. Sobolev,
P. Aruev,
A. Kalydin,
E. Shek,
V. Sabrodskiy,
A. Loshachenko,
K. Shel’makh,
V. Volodin,
Artūrs Medvids,
L. Xiang,
D. Yang
Structural defects induced by electron irradiation of n-Cz-Si wafers were identified. The influence of the annealing conditions in a chlorine-containing atmosphere on the structural and luminescent properties of the samples was examined and the optimal annealing conditions were found. Light-emitting diodes based on electron-irradiated and high-temperature-annealed wafers were fabricated by a vapour-phase epitaxy technique and their luminescence properties were studied. A high-intensity dislocation-related D1 line was observed at 1.6 μm in the room-temperature electroluminescence spectrum.
Keywords
Light-Emitting Diodes, Dislocation
DOI
10.4028/www.scientific.net/SSP.205-206.305
Hyperlink
http://www.scientific.net/SSP.205-206.305
Sobolev, N., Aruev, P., Kalydin, A., Shek, E., Sabrodskiy, V., Loshachenko, A., Shel’makh, K., Volodin, V., Medvids, A., Xiang, L., Yang, D. Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon. Solid State Phenomena, 2014, Vol.205-206, pp.305-310. ISSN 1662-9779. Available from: doi:10.4028/www.scientific.net/SSP.205-206.305
Publication language
English (en)