Photoelectric Response of Ge Nanocones Formed on Si1−xGex by Laser Radiation

The 13th International Conference on Global Research and Education "Inter Academia 2014": Digest 2014
A Gorb, O. Korotchenkov, V Kuryliuk, Artūrs Medvids, Gatis Mozoļevskis, A Nadtochiy, A. Podolian

Exposing the SiGe/Si structure to sufficiently large laser radiation intensities, relevant to the formation of Ge nanocones, increases the surface photovoltage (SPV) quite significantly. The SPV decays do not speed up with the radiation, which indicates that the laser-induced growth of nanocones is not accompanied by recombination centers produced at the SiGe/Si interfaces. The laser radiation fabrication technique used here is therefore an effective mean of producing cost-effective photosensors based on SiGe/Si.

Keywords
Photoelectric Response, Ge, Nanocones, Laser Radiation

Gorb, A., Korotchenkov, O., Kuryliuk, V., Medvids, A., Mozoļevskis, G., Nadtochiy, A., Podolian, A. Photoelectric Response of Ge Nanocones Formed on Si1−xGex by Laser Radiation. In: The 13th International Conference on Global Research and Education "Inter Academia 2014": Digest, Latvia, Riga, 10-12 September, 2014. Riga: Riga Technical University, 2014, pp.257-258. ISBN 978-9934-10-583-8.

Publication language
English (en)