Phase Transition in SnS-based Compounds by Pulsed Laser Radiation
The 14th International Conference on Global Research and Education "Inter-Academia 2015": Abstracts Book 2015
Pāvels Onufrijevs, Andrii Voznyi, Volodymyr Kosyak, Anatoliy Opanasyuk, Artūrs Medvids, Līga Orlova, Gundars Mežinskis

The present research is focused on the elaboration of laser technology for phase transition in Sn-S binary system in order to form n-SnS2/p-SnS heterojunction. With this purpose, the SnS2 films deposited on ITO coated glass substrates by close spaced sublimation method were irradiated by the Nd:YAG laser. The analysis of the samples by Raman spectroscopy shows phase transition of near-surface layer from SnS2 to SnS after irradiation. Moreover, the electrical study of irradiated samples reveals diode behavior of the current-voltage characteristic of Al/sample/ITO sandwich structure which was explained by formation of heterojunction.


Keywords
SnS-based thin films, phase transition, laser radiation, closed space sublimation
Hyperlink
http://iac.icsu.shizuoka.ac.jp/en/conference/ia2015/

Onufrijevs, P., Voznyi, A., Kosyak, V., Opanasyuk, A., Medvids, A., Grase, L., Mežinskis, G. Phase Transition in SnS-based Compounds by Pulsed Laser Radiation. In: The 14th International Conference on Global Research and Education "Inter-Academia 2015": Abstracts Book, Japan, Hamamatsu, 28-30 September, 2015. Shizuoka: Shizuoka University, 2015, pp.216-217.

Publication language
English (en)
The Scientific Library of the Riga Technical University.
E-mail: uzzinas@rtu.lv; Phone: +371 28399196