Structural Properties and Chemical Composition of SnS2 Thin Films

Abstracts of the Riga Technical University 56th International Scientific Conference : Section: Materials Science and Applied Chemistry 2015
Līga Orlova, Andrii Voznyi, Volodymyr Kosyak, Artūrs Medvids, Gundars Mežinskis

Due to optimal band gap (2.2 eV), high free carrier mobility tin disulfide (SnS2) thin films are considered as a promising material for application in microelectronic devices. For example, n-type SnS2 could be used as solar cells window layer instead of conventional CdS thin films. Also, a specific two-dimensional 2D structure of the SnS2 crystallites makes it possible to use this material in next generation electronics. Other important advantages of SnS related compounds are their low-cost, earth abundance and non-toxicity.

Keywords
tin disulfide, thin films, chemical composition

Grase, L., Voznyi, A., Kosyak, V., Medvids, A., Mežinskis, G. Structural Properties and Chemical Composition of SnS2 Thin Films. In: Abstracts of the Riga Technical University 56th International Scientific Conference : Section: Materials Science and Applied Chemistry, Latvia, Riga, 14-16 October, 2015. Riga: RTU Press, 2015, pp.27-27. ISBN 978-9934-10-733-7.

Publication language
English (en)