The CZTS (Cu2ZnSnS4) kesterite compound is a potential semiconducting absorber material for solar cells as alternatively to the existing CIGS and CdTe owing to suitable band gap of 1.5 eV with a large optical absorption coefficient (>104 cm−1) and p-type conductivity. The constituent elements are earth abundant, inexpensive and environmentally benign. Calculations according to the Shockley–Queisser photon balance have estimated the theoretical conversion efficiency of single-junction CZTS solar cells to be as high as 32,2 %. Promising power conversion efficiencies of 12,6 % were recently demonstrated for Cu2ZnSn(S,Se) but there is room for improvement. In light of the above-mentioned advantages, this compound shows extreme promise to be the ideal solar cell material for massive use. The CZTS sample was deposited on glass substrate by pulsed spray-pyrolysis deposition method. The thickness of the film was 1,1 µm. After that sample was irradiated in air atmosphere by Nd:YAG laser using second harmonic λ = 532 nm with intensity I = 17,5 MW/cm2 in the scanning mode. In order to study phase composition before and after laser annealing we used X-ray diffraction (XRD) and Raman spectroscopy. Surface morphology and cross-section of the sample were investigated by atomic force microscopy (AFM) and scanning electron microscope (SEM). For estimation optical band gap of the materials the transmittance and reflectance spectra were measured. The chemical composition of the film was examined by the EDS method. We have found that the obtained sample has a single-phase kesterite CZTS. This is confirmed by the position of the peaks on the X-ray patterns and Raman spectrum (334 cm-1 and 291 cm-1). After laser irradiated the main peaks of the Raman spectra of CZTS layer was shifted by 6 cm-1 and 5 cm-1, respectively (328 cm-1 and 286 cm-1). The FWHM (full width at half maximum) parameter for this peaks is decreases. For Raman spectrum the peaks has changed in 1,3 times and for XRD peaks in 2 times. This indicate that there was healing defects in the crystalline structure of the sample.