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Publikācija: FT-IR Analysis of Electron Irradiated Single and Multilayer Si3N4 Coatings

Publication Type Conference paper
Funding for basic activity Research project
Defending: ,
Publication language English (en)
Title in original language FT-IR Analysis of Electron Irradiated Single and Multilayer Si3N4 Coatings
Field of research 1. Natural sciences
Sub-field of research 1.3 Physical sciences
Authors Liga Avotina
Elina Pajuste
Marina Romanova
Aleksandrs Zaslavskis
Valentina Kinerte
Bronislavs Lescinskis
Jurijs Dehtjars
Gunta Kizane
Keywords dielectric, electron irradiation, silicon nitride, ionizing radiation, capacitor, nanocapacitor, FTIR
Abstract Due to its high dielectric constant silicon nitride (Si3N4) is considered to be a perspective material for dielectric nanolayer in nanocapacitors. It is proposed to use the Si3N4 in nanocapacitors forseen for applications in harsh conditions, such as space environment. In the conditions where exposure to ionizing radiation is possible, radiation stability of the material is of great importance. Formation of radiation-induced defects, breaking of chemical bonds and formation of voids can affect performance of a nanocapacitor. To estimate the influence of ionizing radiation on Si3N4 dielectric nanolayers, it is important to characterize composition of chemical bonds and their changes caused by the ionizing radiation. Radiation stability of single- and multilayered Si3N4 of different thicknesses was investigated. The samples were synthesized as a SiO2/P-doped polySi/Si3N4 stack on Si wafer. Si3N4 layers were deposited in a low pressure chemical vapour deposition (LPCVD) process using SiH4 and NH3 as reactant gases. The samples were irradiated with accelerated electrons (5 MeV) generated by a linear electron accelerator (ELU-4), absorbed doses up to 10 MGy. Chemical bonds in non-irradiated and irradiated samples were analyzed by means of Fourier transformation infrared (FT-IR) spectrometry (Bruker Vertex 70v). The results showed that chemical bonds in the synthesized single- and multilayered Si3N4 remained stable up to absorbed doses 10 MGy.
Reference Avotina, L., Pajuste, E., Romanova, M., Zaslavskis, A., Kinerte, V., Lescinskis, B., Dehtjars, J., Kizane, G. FT-IR Analysis of Electron Irradiated Single and Multilayer Si3N4 Coatings. In: 8th International Conference on Silicate Materials "BaltSilica 2018": Book of Abstracts, Latvia, Riga, 30 May-1 Jun., 2018. Riga: RTU Publishing House, 2018, pp.109-110. ISSN 2243-6057.
ID 27455