RTU Research Information System
Publikācija: 3
| Publication Type | Scientific article indexed in SCOPUS or WOS database |
|---|---|
| Funding for basic activity | EU Structural Funds |
| Defending: | , |
| Publication language | English (en) |
| Title in original language | 3,3'-Bicarbazole Structural Derivatives as Charge Transporting Materials for Use in OLED Devices |
| Field of research | 1. Natural sciences |
| Sub-field of research | 1.4 Chemical sciences |
| Research platform | None |
| Authors |
Armands Rudušs
Kaspars Traskovskis Elīna Otikova Aivars Vembris Raitis Grzibovskis Marcis Lielbardis Valdis Kokars |
| Keywords | OLED, charge transport, 3,3′-bicarbazole, host materials, luminescence, thin films |
| Abstract | In this study we report novel 3,3′-bicarbazole based charge transporting materials mainly designed for a use in systems containing phosphorescent iridium (III) complex emitters. A low-cost oxidative coupling reaction using FeCl 3 was employed in the synthesis of 3,3′-bicarbazole compounds. Different derivatives of 3,3′-bicarbazole with 4-ethoxyphenyl- and ethyl- substituents at 9,9′- positions and (2,2-diphenylhydrazono)methyl- and 4-(dimethylamino)styryl- substituents at 6,6′- positions were synthesized. Obtained (2,2-diphenylhydrazono)methyl- derivatives exhibit glass transition temperatures that are sufficient for applications in electronic devices. Thin amorphous films of good optical quality can be produced from synthesized materials using spin-coating method. The effect of (2,2-diphenylhydrazono)methyl- substituents at 6,6′- and 4-ethoxyphenyl- substituents at 9,9′- positions on the charge transport properties of the 3,3′-bicarbazole derivatives was investigated. With the introduction of both electron acceptor and donor moieties to 3,3′-bicarbazole structure material electron and hole drift mobilities reach approximately 1·10 -5 cm 2 /V·s. Molecule ionization (I f ) levels and electron affinity (EA f ) levels in thin films were determined using photoelectric effect experiment. Depending on the nature of substituents at 6,6′- and 9,9′- positions I f levels range from -5.19 to -5.13 eV and EA f levels are from -2.44 to -2.38 eV. |
| DOI: | 10.1117/12.2306850 |
| Hyperlink: | http://spie.org/Publications/Proceedings/Paper/10.1117/12.2306850  |
| Reference | Rudušs, A., Traskovskis, K., Otikova, E., Vembris, A., Grzibovskis, R., Lielbardis, M., Kokars, V. 3,3'-Bicarbazole Structural Derivatives as Charge Transporting Materials for Use in OLED Devices. Proceedings of SPIE, 2018, Vol. 10687, pp.1068718-1-1068718-8. ISSN 0277-786X. e-ISSN 1996-756X. Available from: doi:10.1117/12.2306850 |
| Additional information |
Citation count:
|
| ID | 27460 |
0