RTU Research Information System
Latviešu English

Publikācija: Interface of Silicon Nitride Nanolayers with Oxygen Deficiency

Publication Type Full-text conference paper published in conference proceedings indexed in SCOPUS or WOS database
Funding for basic activity Research project
Defending: ,
Publication language English (en)
Title in original language Interface of Silicon Nitride Nanolayers with Oxygen Deficiency
Field of research 2. Engineering and technology
Sub-field of research 2.5 Materials engineering
Research platform Materials, Processes, and Technologies
Authors Jurijs Dehtjars
Līga Avotiņa
Gennady Enichek
Marina Romanova
Ben Schmidt
Evgeny Shulzinger
Hermanis Sorokins
Aleksandrs Viļķens
Aleksandrs Zaslavski
Keywords silicon nitride, nanolayer, oxygen
Abstract Multilayer Si3N4 consisting of Si3N4 nanolayers with the total thickness 60 nm was deposited layer-by-layer in a low-pressure chemical vapor deposition process. Compared with the single-layer Si3N4, the multilayer Si3N4 had one-third less oxygen concentration at the interfaces. This decreased density of electrically active centers of oxygen traps and improved quality of nanocapacitors with multilayer Si3N4 dielectric.
DOI: 10.1109/BEC.2018.8600964
Hyperlink: https://ieeexplore.ieee.org/document/8600964 
Reference Dehtjars, J., Avotiņa, L., Enichek, G., Romanova, M., Schmidt, B., Shulzinger, E., Sorokins, H., Viļķens, A., Zaslavski, A. Interface of Silicon Nitride Nanolayers with Oxygen Deficiency. In: 2018 16th Biennial Baltic Electronics Conference (BEC 2018): Proceedings, Estonia, Tallinn, 8-10 October, 2018. Piscataway: IEEE, 2019, pp.43-46. ISBN 978-1-5386-7313-3. e-ISBN 978-1-5386-7312-6. ISSN 1736-3705. e-ISSN 2382-820X. Available from: doi:10.1109/BEC.2018.8600964
Additional information Citation count:
ID 28321