Mechanical stress plays the main role on duration of performance of semiconductor devices and microprocessors. The cause of the stress may be different, depending on manufacture technology performance conditions and structure of the device. So, for example, design of the heterostructure of photon detector or diode is characterized by mechanical stress on the interface due to mismatch of the crystalline lattice semiconductor components or difference in thermal expansion coefficients. Therefore, laser method for control of mechanical stress on nano level is proposed. It was found that strongly absorbed Nd:YAG laser radiation (second harmonica of Nd:YAG laser wave lings 532nm, pulse duration 6ns, maximal laser intensity 10 MW/cm2) leads to a non-monotonous dependence of micro hardness of p-Si(B) and n-type Si(P) crystals on laser radiation. This dependence is characterized by two maxima for p-Si and one maximum for n-Si crystals. In both cases the increase of micro hardness at higher laser intensity is explained by formation of mechanically compressed layer at the irradiated surface due to concentration of the interstitial atoms at the surface of Si crystal in temperature gradient field. The decrease of micro hardness is explained by formation of nano-cones on the irradiated surface of crystal which was observed in Si, Ge, GaAs and CdTe using atomic force microscope.