The goal of this research is to identify the influence of HAp defects (such as OH group, H, O atom vacancies, H atom interstitials, and their combination) on the electrical potential of HAp’s surface. To achieve the aim of the Thesis, the following tasks have been put forward: 1) to construct theoretical models for determining the electrical properties of HAp structures with defects; 2) to carry out theoretical research to determine the electrical properties of HAp structures with defects by evaluating the electrical polarization of HAp clusters containing defects; 3) generating different types of defects in order to carry out an experimental study on determining the electrical properties of HAp structures with defects. To induce defects by using annealing, hydrogenation, MW and gamma-ray irradiation. Such point defects as O-vacancies should be produced under the influence of applied gamma radiation. The hydrogenation should evaluate the intrusion of protons into the interior and changes of the surface charge. MW radiation promotes the motion of protons along OH-channel. Using synchrotron-induced photoluminescence (PL), to identify 7 local levels of HAp structures with defects in the forbidden band and investigate the deep levels of HAp; 4) to carry out the experiments on determining the electrical potential of HAp surface depending on the presence of defects using EWF measurements; 5) to compare the theoretical and experimental research results and to give suggestions on implementation of the producing technology of HAp modified structures with different types of structural imperfections.