Impact of Laser Radiation on Microhardness of a Semiconductor

30th International Conference on the Physics of Semiconductors 2010
Artūrs Medvids, Pāvels Onufrijevs, Gorgi Chiradze, Faina Muktapavela

The strongly absorbed light is generating the electron-hole pares [1] or shallow impurities [2] induce decrease of microhardness (μH) of semiconductor due to softening of valence bonds of atoms in crystalline lattice. High intensity of light, for example, laser radiation (LR) can initiate formation of stronger chemical bonds which induces the non-reverse increase of the μH, for example, formation of Si-C bond in Si [3].

Keywords
laser radiation, microhardness, semiconductor

Medvids, A., Onufrijevs, P., Chiradze, G., Muktapavela, F. Impact of Laser Radiation on Microhardness of a Semiconductor. In: 30th International Conference on the Physics of Semiconductors, Korea Republic, Seoul , 25-30 July, 2010. Seoul: ICPS, 2010, pp.338-338.

Publication language
English (en)