“Black Silicon” Formation by Nd: YAG Laser Radiation
Advanced Materials Research 2011
Artūrs Medvids, Pāvels Onufrijevs, Edvīns Daukšta, Volodymyr Kyslyi

The possibility to form “black silicon” on the surface of Si structure by Nd:YAG laser radiation has been shown. The shape and height of micro-cone structure strongly depends on Nd:YAG laser intensity and number of laser pulses. Light is repeatedly reflected between the cones in the way that most of it is absorbed. Si micro-cone structure spectral thermal radiation is close to black body spectral radiance, which makes this structure useful for solar cells application. The micro-chemical analysis performed by SEM has shown that the microstructures contain NiSi2. This was approved by presence of LO phonon line in Raman back scattering spectrum. The control of micro-cone shape and height was achieved by changing the laser intensity and number of pulses.


Atslēgas vārdi
black silicon, microstructure, laser, black body, solar cells
DOI
10.4028/www.scientific.net/AMR.222.44
Hipersaite
https://www.scientific.net/AMR.222.44

Medvids, A., Onufrijevs, P., Daukšta, E., Kyslyi, V. “Black Silicon” Formation by Nd: YAG Laser Radiation. Advanced Materials Research, 2011, Vol. 222, 44.-47.lpp. ISSN 1662-8985. Pieejams: doi:10.4028/www.scientific.net/AMR.222.44

Publikācijas valoda
English (en)
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