Decrease of Point Defect Concentration at a Surface of ZnO/Si Heterostructure by Powerful Laser Radiation

Advanced Materials Research 2011
Pāvels Onufrijevs, Artūrs Medvids, Edvīns Daukšta, Tina Trautnitz

It was shown the possibility to improve ZnO crystal lattice by powerful Nd:YAG laser radiation. The measurements of photoluminescence spectra have shown the decrease of the spectra intensity of defect related band with maximum at 2.4 eV after irradiation by laser. The control of photoluminescence spectra intensity of defect related band was achieved by different laser radiation intensity. Topography studies using atomic force microscope showed smoothing of the surface, as well. The formation of nanocavities on ZnO/Si sample surface at higher laser radiation intensity was detected by scanning electron microscope.

Atslēgas vārdi
ZnO/Si heterostructure, laser irradiation, point defects, photoluminescence, atomic
DOI
10.4028/www.scientific.net/AMR.222.158
Hipersaite
https://www.scientific.net/AMR.222.158

Onufrijevs, P., Medvids, A., Daukšta, E., Trautnitz, T. Decrease of Point Defect Concentration at a Surface of ZnO/Si Heterostructure by Powerful Laser Radiation. Advanced Materials Research, 2011, Vol. 222, 158.-161.lpp. ISSN 1662-8985. Pieejams: doi:10.4028/www.scientific.net/AMR.222.158

Publikācijas valoda
English (en)