Mechanisms of Strong Photoluminescence from Si Nanocrystals
Advanced Materials Research
2011
Talivaldis Puritis,
Jevgenijs Kaupužs,
Edvīns Daukšta
Photoluminescence mechanisms (models) are reviewed and experimental data are analyzed based on our model, related to direct radiative transitions from the second conduction subband
to the first one.
Atslēgas vārdi
Si nanocrystals, porous silicon, photoluminescence, excitation wavelength, radiative transition, Auger recombination, phonon-assisted recombination
DOI
10.4028/www.scientific.net/AMR.222.175
Hipersaite
https://www.scientific.net/AMR.222.175
Puritis, T., Kaupužs, J., Daukšta, E. Mechanisms of Strong Photoluminescence from Si Nanocrystals. Advanced Materials Research, 2011, Vol. 222, 175.-180.lpp. ISSN 1662-8985. Pieejams: doi:10.4028/www.scientific.net/AMR.222.175
Publikācijas valoda
English (en)