P-n Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells Applications

Advanced Materials Research 2011
Artūrs Medvids, Pāvels Onufrijevs, Edvīns Daukšta, Jānis Barloti, Alexander Ulyashin, Igor Dmytruk, Iryna Pundyk

The research report is devoted to the development of a new method of nanostructures formation in ITO/p-Si/Al structure with powerful laser radiation and study of its optical and electrical properties for solar cells applications. It was shown that after the structure irradiation by Nd:YAG laser second harmonic, dark current voltage characteristics become diode-like. Increase of ITO/p-Si/Al solar cell efficiency after irradiation by the laser, using photocurrent voltage characteristic method, was shown.

Atslēgas vārdi
ITO, solar cells, laser irradiation, nanostructures, photoluminescence, atomic force microscope
DOI
10.4028/www.scientific.net/AMR.222.225
Hipersaite
https://www.scientific.net/AMR.222.225

Medvids, A., Onufrijevs, P., Daukšta, E., Barloti, J., Ulyashin, A., Dmytruk, I., Pundyk, I. P-n Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells Applications. Advanced Materials Research, 2011, Vol. 222, 225.-228.lpp. ISSN 1662-8985. Pieejams: doi:10.4028/www.scientific.net/AMR.222.225

Publikācijas valoda
English (en)