Stress Relaxation Mechanism by Strain in the Si-SiO2 System and Its Influence on the Interface Properties

Solid State Phenomena 2011
D. Kropman, E. Mellokov, T. Kärner, T. Laas, Artūrs Medvids, Pāvels Onufrijevs, Edvīns Daukšta

The results of the investigation of stresses relaxation by strains in use of analyze of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stresses relaxation mechanism depends on the oxidation conditions: temperature, cooling rate, oxide thickness. In the Si-SiO2-Si3N4 system the relaxation of stresses by the strains occur due to the opposite sign of the thermal expansion coefficients of Si-SiO2 and Si3N4 on Si. Laser irradiation was used to modify the stresses in system.

Atslēgas vārdi
Si-SiO2-Si3N4 interface, EPR, point defects, stress relaxation
DOI
10.4028/www.scientific.net/SSP.178-179.259
Hipersaite
https://www.scientific.net/SSP.178-179.259

Kropman, D., Mellokov, E., Kärner, T., Laas, T., Medvids, A., Onufrijevs, P., Daukšta, E. Stress Relaxation Mechanism by Strain in the Si-SiO2 System and Its Influence on the Interface Properties. Solid State Phenomena, 2011, Vol.178-179, 259.-262.lpp. ISSN 1662-9779. Pieejams: doi:10.4028/www.scientific.net/SSP.178-179.259

Publikācijas valoda
English (en)