Stresses Relaxation Mechanism in the Si-SiO2 System and Its Influence on the Interface Properties

BaltSilica 2011 : Book of Abstracts of the 5th Baltic Conference on Silicate Materials 2011
D. Kropman, E. Mellikov, T. Kärner, Artūrs Medvids, Pāvels Onufrijevs, Edvīns Daukšta

The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, scanning electron microscopy and samples deflection are presented. It is shown that stresses relaxation mechanism depend on the oxidation condition: temperature, cooling rate and oxide thickness. In the Si-SiO2-Si3N4 system the stresses relaxation by the strain occurs due to the opposite sign of the thermal expansion coefficient of Si-SiO2 and Si3N4 on Si. Laser irradiation allows modifying the system stresses.

Atslēgas vārdi
Si-SiO2 system, semiconductors

Kropman, D., Mellikov, E., Kärner, T., Medvids, A., Onufrijevs, P., Daukšta, E. Stresses Relaxation Mechanism in the Si-SiO2 System and Its Influence on the Interface Properties. No: BaltSilica 2011 : Book of Abstracts of the 5th Baltic Conference on Silicate Materials, Latvija, Rīga, 23.-25. maijs, 2011. Riga: RTU Publishing House, 2011, 33.-34.lpp. ISSN 2243-6057.

Publikācijas valoda
English (en)