Nano-Cones Formed on a Surface of Semiconductors by Laser Radiation: Technology, Model and Properties

AIP Conference Proceedings: 30th International Conference on the Physics of Semiconductors 2011
Artūrs Medvids, Pāvels Onufrijevs

The new laser method for nanostructures formation on a surface of semiconductors Si, Ge, GaAs and SiGe, CdZnTe solid solutions is proposed. For the first time was shown the possibility of graded band gap structure formation in elementary semiconductors. Thermogradient effect has a main role in initial stage of nano-cones and graded band gap structure formation by laser radiation in semiconductors.

Atslēgas vārdi
laser radiation, thermogradient effect, nano-cones
DOI
10.1063/1.3666353
Hipersaite
http://proceedings.aip.org/resource/2/apcpcs/1399/1/259_1?isAuthorized=no

Medvids, A., Onufrijevs, P. Nano-Cones Formed on a Surface of Semiconductors by Laser Radiation: Technology, Model and Properties. No: AIP Conference Proceedings: 30th International Conference on the Physics of Semiconductors, Korejas republika, Seoul, 25.-30. jūlijs, 2010. Melville: American Institute of Physics, 2011, 259.-260.lpp. ISBN 978-0-7354-1002-2. ISSN 0094-243X. e-ISSN 1551-7616. Pieejams: doi:10.1063/1.3666353

Publikācijas valoda
English (en)