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Publikācija: Formation of P-N Junction in ITO/p-Si Structure by Laser Radiation for Solar Cells Applications

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Publikācijas valoda English (en)
Nosaukums oriģinālvalodā Formation of P-N Junction in ITO/p-Si Structure by Laser Radiation for Solar Cells Applications
Pētniecības nozare 1. Dabaszinātnes
Pētniecības apakšnozare 1.3. Fizika un astronomija
Autori Artūrs Medvids
Pāvels Onufrijevs
Edvīns Daukšta
Jānis Barloti
Igor Dmytruk
Iryna Pundyk
Atslēgas vārdi p-n junction, ITO/p-Si, laser, solar cells
Anotācija The research report is devoted to the development of a new method of nanostructures formation in ITO/p-Si/Al structure with powerful laser radiation and study of its optical and electrical properties for solar cells applications[1]. It was shown that after the structure irradiation by a Nd:YAG laser second harmonic, dark current voltage characteristics become diode-like. Increase of ITO/p-Si/Al solar cell efficiency after irradiation by the laser, using photocurrent voltage characteristic method, was shown. Indium–tin-oxide (ITO) thin films are widely used as transparent conductive oxide in optoelectronics devices such as solar cells [2], liquid crystal displays (LCD) and plasma display panels. In this report, we investigated the ITO/p-Si/Al structure irradiated by Nd:YAG laser with the aim to form a p-n junction and to grow nanocones on a interface of ITO/Si. It was shown that Quantum confinement effect (QCE) in nanocones with graded band gap has the main role in increase of solar cell efficiency. In conclusion of the experiments possibility of p-n junction and Si nanocones formation by the laser irradiation in ITO/p-Si/Al structure was shown. The photoluminescence spectra from irradiated and non-irradiated ITO/p-Si/Al structure by the laser radiation have been found in visible part of spectra and is explained by presence of quantum confinement effect in nanocones with graded band gap. Study of dark I-V characteristics showed diode-like character with rectification coefficient K = 105 at 5 V caused by laser irradiation with intensity I = 2.83 MW/cm2. After irradiation of ITO/p-Si/Al structure by the laser, the solar cell efficiency increased by two times comparison to the non-irradiated structure. References 1. J.Zhua, Z. Yua, S. Fana and Y. Cui, Materials Science and Engineering, 70, 330 (2010) 1. L. Bruk. V. Fedorov. D. Sherban. A. Simashkevich. I. Usatii. E. Bobeico and P. Morvillo: Materials Science and Engineering B, 160, 282 (2009)
Atsauce Medvids, A., Onufrijevs, P., Daukšta, E., Barloti, J., Dmytruk, I., Pundyk, I. Formation of P-N Junction in ITO/p-Si Structure by Laser Radiation for Solar Cells Applications. No: International Conference "Functional Materials and Nanotechnologies" (FM&NT-2011): Book of Abstracts, Latvija, Riga, 16.-16. janvāris, 2012. Rīga: Cietvielu fizikas instituts, 2011, 252.-252.lpp. ISBN 978-9984-45-334-7.
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