Stress Relaxation Mechanism by Strain in the Si-SiO2 System and Its Influence on the Interface

IOP Conference Series: Materials Science and Engineering 2011
D. Kropman, E. Mellikov, T. Kärner, Artūrs Medvids, Pāvels Onufrijevs, Edvīns Daukšta

The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, scanning electron microscopy and samples deflection are presented. It is shown that stresses relaxation mechanism depend on the oxidation condition: temperature, cooling rate and oxide thickness. In the Si-SiO2-Si3N4 system the stresses relaxation by the strain occurs due to the opposite sign of the thermal expansion coefficient of Si-SiO2 and Si3N4 on Si. Laser irradiation allows modifying the system stresses.

Atslēgas vārdi
Si-SiO2 interface, Nd:YAG laser
DOI
10.1088/1757-899X/25/1/012018
Hipersaite
http://iopscience.iop.org/1757-899X/25/1/012018

Kropman, D., Mellikov, E., Karner, T., Medvids, A., Onufrijevs, P., Daukšta, E. Stress Relaxation Mechanism by Strain in the Si-SiO2 System and Its Influence on the Interface. IOP Conference Series: Materials Science and Engineering, 2011, Vol.25, Iss.1, 012018.-012018.lpp. ISSN 1757-8981. e-ISSN 1757-899X. Pieejams: doi:10.1088/1757-899X/25/1/012018

Publikācijas valoda
English (en)