Mechanisms of P-N Junction Formation in I-Ge Crystal by Laser Radiation
International Conference on Extended Defects in Semiconductors (EDS-2012): Book of Abstracts 2012
Artūrs Medvids, Roberts Rimša, Pāvels Onufrijevs, Edvīns Daukšta, Gatis Mozoļevskis, Talivaldis Puritis

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Atslēgas vārdi
p-n junction, i-Ge crystal, laser radiation

Medvids, A., Rimša, R., Onufrijevs, P., Daukšta, E., Mozoļevskis, G., Puritis, T. Mechanisms of P-N Junction Formation in I-Ge Crystal by Laser Radiation. No: International Conference on Extended Defects in Semiconductors (EDS-2012): Book of Abstracts, Grieķija, Thessaloniki, 24.-29. jūnijs, 2012. Thessaloniki: 2012, 139.-139.lpp.

Publikācijas valoda
English (en)
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