Enhancement of Resistivity of CdZnTe Crystal by Laser Radiation

The 13th International Conference on Global Research and Education "Inter Academia 2014": Digest 2014
Artūrs Medvids, Aleksandrs Mičko, Edvīns Daukšta

The enhancement of resistivity of CdZnTe crystal using 1064nm Nd:YAG laser radiation was shown. This effect is explained by compensation of cadmium vacancy (VCd ) by In and Cd interstitial atoms around Te inclusion due to laser induced temperature gradient around Te inclusion.

Atslēgas vārdi
Resistivity, CdZnTe, Laser Radiation

Medvids, A., Mičko, A., Daukšta, E. Enhancement of Resistivity of CdZnTe Crystal by Laser Radiation. No: The 13th International Conference on Global Research and Education "Inter Academia 2014": Digest, Latvija, Riga, 10.-12. septembris, 2014. Riga: Riga Technical University, 2014, 37.-38.lpp. ISBN 978-9934-10-583-8.

Publikācijas valoda
English (en)