Formation of Buried Layers by Laser Radiation

Proceedings of the 25th European Solid State Device Research Conference (ESSDERC '95) 2014
Artūrs Medvids, Jevgenijs Kaupužs

New conception and both experimental anid theoretical results regarding buried layers formation and control of their depth anid thickness are presented. Effect of the CO2laser radiation on distribution and state of oxygen or nitrogen atoms, implanted in silicon wafer, is investigated experimentally. A model is proposed and equations are obtained descrbing the process of buried layer's foruation from impurities, introduced inside the crystal, in presence of the temperature gradient. An interaction between impurities is taken into account.

Atslēgas vārdi
Buried layer, Laser Radiation, CO2
Hipersaite
http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5435865

Medvids, A., Kaupužs, J. Formation of Buried Layers by Laser Radiation . No: Proceedings of the 25th European Solid State Device Research Conference (ESSDERC '95), Nīderlande, Hague, 22.-26. septembris, 2014. Piscataway: IEEE, 2014, 671.-674.lpp. ISBN 286332182X.

Publikācijas valoda
English (en)