Photoelectric Response of Ge Nanocones Formed on Si1−xGex by Laser Radiation

Advanced Materials Research 2015
Alla Gorb, Oleg Korotchenkov, Vasyl Kuryliuk, Artūrs Medvids, Andriy Nadtochiy, Artem Podolian

Irradiation of SiGe-on-Si structures by pulsed Nd:YAG laser with intensities 1.0 MW/cm2 leads to the formation of Ge nanocones. As a result increases the surface photovoltage (SPV) signal up to 10 times. The SPV decays do not speed up with the radiation, thus indicating that the laser treatments do not cause an increase in the concentration of recombination centers at interfaces. Therefore the fabrication technique proposes here may be considered to be an effective approach of producing cost-competitive photosensors based on SiGe/Si.

Atslēgas vārdi
SiGe, nanocones, photovoltage, strain
DOI
10.4028/www.scientific.net/AMR.1117.23
Hipersaite
http://www.scientific.net/AMR.1117.23

Gorb, A., Korotchenkov, O., Kuryliuk, V., Medvids, A., Nadtochiy, A., Podolian, A. Photoelectric Response of Ge Nanocones Formed on Si1−xGex by Laser Radiation. Advanced Materials Research, 2015, Vol. 1117, 23.-25.lpp. ISSN 1662-8985. Pieejams: doi:10.4028/www.scientific.net/AMR.1117.23

Publikācijas valoda
English (en)