Influence of Accelerated Electrons and Gamma Radiation on Dielectric Layer of SiO2-Si3N4-SiO2 Capacitor

Riga Technical University 57th International Scientific Conference "Materials Science and Applied Chemistry" (MSAC 2016): Proceedings and Programme 2016
Līga Avotiņa, Marina Romanova, Roberts Zarins, Arturs Zarins, Davis Conka, Inna Gavrilkina, Aleksandrs Zaslavskis, Gunta Ķizāne, Jurijs Dehtjars

The influence of relatively low absorbed dose of 3 kGy of accelerated electrons and gamma radiation on surface topography and chemical bonds of the dielectric layer of SiO2-Si3N4-SiO2 capacitors has been studied. The samples have been analyzed using atomic force microscopy (AFM), attenuated total reflection Fourier transformation infrared spectroscopy (ATR-FTIR) and X-ray diffractometry (XRD).

Atslēgas vārdi
ionizing radiation, capacitor, silicon nitride, silicon oxide
Hipersaite
https://conferences.rtu.lv/index.php/MSAC/MSAC2016/paper/viewFile/34/18

Avotiņa, L., Romanova, M., Zarins, R., Zarins, A., Conka, D., Gavrilkina, I., Zaslavskis, A., Ķizāne, G., Dehtjars, J. Influence of Accelerated Electrons and Gamma Radiation on Dielectric Layer of SiO2-Si3N4-SiO2 Capacitor. No: Riga Technical University 57th International Scientific Conference "Materials Science and Applied Chemistry" (MSAC 2016): Proceedings and Programme, Latvija, Riga, 21.-21. oktobris, 2016. Riga: RTU Press, 2016, 26.-30.lpp. ISBN 978-9934-10-861-7.

Publikācijas valoda
English (en)