Electrical Properties of Single Layer and Multilayer Si3N4 Dielectric on Si Substrate

3rd International Conference “Innovative Materials, Structures and Technologies” (IMST2017): Book of Abstracts 2017
Marina Romanova, Līga Avotiņa, Roberts Zariņš, Artūrs Zariņš, Juris Bitenieks, Antons Vilimans, Aleksandrs Zaslavskis, Gunta Ķizāne, Jurijs Dehtjars

In this research single-layered and multilayered Si3N4 with the total thickness of 100nm was studied. Si3N4 was fabricated on silicon wafer substrate using low pressure chemical vapor deposition process (LPCVD). Morphology of the samples was studied by scanning electron and atomic force microscopy. Chemical bonds of the samples were analyzed using Fourier transform infrared spectroscopy. Dielectric properties of Si3N4 were measured using dielectric spectroscopy. Hidden electrically active centers of Si3N4 were studied by thermoelectron emission spectroscopy.

Atslēgas vārdi
silicon nitride, nanocapacitor, dielectric

Romanova, M., Avotiņa, L., Zariņš, R., Zariņš, A., Bitenieks, J., Vilimans, A., Zaslavskis, A., Ķizāne, G., Dehtjars, J. Electrical Properties of Single Layer and Multilayer Si3N4 Dielectric on Si Substrate. No: 3rd International Conference “Innovative Materials, Structures and Technologies” (IMST2017): Book of Abstracts, Latvija, Riga, 27.-29. septembris, 2017. Riga: 2017, 137.-137.lpp.

Publikācijas valoda
English (en)