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Publikācija: Electrical Properties of Single Layer and Multilayer Si3N4 Dielectric on Si Substrate

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Nosaukums oriģinālvalodā Electrical Properties of Single Layer and Multilayer Si3N4 Dielectric on Si Substrate
Pētniecības nozare 1. Dabaszinātnes
Pētniecības apakšnozare 1.3. Fizika un astronomija
Autori Marina Romanova
Līga Avotiņa
Roberts Zariņš
Artūrs Zariņš
Juris Bitenieks
Antons Vilimans
Aleksandrs Zaslavskis
Gunta Ķizāne
Jurijs Dehtjars
Atslēgas vārdi silicon nitride, nanocapacitor, dielectric
Anotācija In this research single-layered and multilayered Si3N4 with the total thickness of 100nm was studied. Si3N4 was fabricated on silicon wafer substrate using low pressure chemical vapor deposition process (LPCVD). Morphology of the samples was studied by scanning electron and atomic force microscopy. Chemical bonds of the samples were analyzed using Fourier transform infrared spectroscopy. Dielectric properties of Si3N4 were measured using dielectric spectroscopy. Hidden electrically active centers of Si3N4 were studied by thermoelectron emission spectroscopy.
Atsauce Romanova, M., Avotiņa, L., Zariņš, R., Zariņš, A., Bitenieks, J., Vilimans, A., Zaslavskis, A., Ķizāne, G., Dehtjars, J. Electrical Properties of Single Layer and Multilayer Si3N4 Dielectric on Si Substrate. No: 3rd International Conference “Innovative Materials, Structures and Technologies” (IMST2017): Book of Abstracts, Latvija, Riga, 27.-29. septembris, 2017. Riga: 2017, 137.-137.lpp.
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