Formation of Graded Band-Gap in CdZnTe byYAG:Nd Laser Radiation

Radiation Measurements 2007
Artūrs Medvids, Aleksandrs Mičko, L. Fedorenko, B. Korbutjak, S. Kryluk, M. Yusupov

A mechanism of formation of graded band-gap based on thermogradient effect (TGE) is proposed in Cd1−xZnxTe at irradiation by second harmonic of a Q-switchedYAG:Nd laser. According to the effect, the interstitial atoms of Cd (Cdi) in Cd1−xZnxTe move along the temperature gradient while the Cd vacancies (VCd) and Zn atoms—in the opposite direction, into the bulk of the semiconductor where temperature is lower. Photoluminescence (PL) spectra studied at 5K show that concentration of Zn atoms increases due to aggregation of VCd with Zn after laser irradiation. Formation of a graded band-gap in Cd1−xZnxTe crystal at irradiation by second harmonica ofYAG:Nd laser is shown to be possible.

Atslēgas vārdi
Cd1−xZnxTe; Laser; Thermogradient effect; Graded band-gap
DOI
10.1016/j.radmeas.2007.01.070
Hipersaite
http://www.sciencedirect.com/science/article/pii/S1350448707000844

Medvids, A., Mičko, A., Fedorenko, L., Korbutjak, B., Kryluk, S., Yusupov, M. Formation of Graded Band-Gap in CdZnTe byYAG:Nd Laser Radiation. Radiation Measurements, 2007, Vol.42, Iss.4–5, 701.-703.lpp. ISSN 1350-4487. Pieejams: doi:10.1016/j.radmeas.2007.01.070

Publikācijas valoda
English (en)