Self-Organization of a 2D Lattice on a Surface of Ge Single Crystal After Irradiation with Nd:YAG Laser
Microelectronics Journal 2008
Artūrs Medvids, Aleksandrs Mičko, Pāvels Onufrijevs

Experimentally observed self-organization of a 2D lattice on the surface of Ge single crystal after irradiation by pulsed Nd:YAG laser is reported. The 2D lattice consists of nano-size hills arranged in a pattern of C6i point group symmetry and is characterized by translational symmetry with the period of 1 μm. Calculations of time-dependent distribution of temperature in the bulk of the Ge sample are presented to explain the phenomenon. The calculations show that overheating of the crystal lattice occurs at laser radiation intensities exceeding 30 MW/cm2. According to synergetic ideas, the presence of the non-equilibrium liquid phase of Ge and a huge gradient of temperature (3×108 K/m) can lead to self-organization of the 2D lattice similar to Benard cells.


Atslēgas vārdi
2D lattice; self-organization; Nd:YAG laser; Ge single crystal; temperature gradient
DOI
10.1016/j.mejo.2007.05.006
Hipersaite
http://www.sciencedirect.com/science/article/pii/S0026269207001176

Medvids, A., Mičko, A., Onufrijevs, P. Self-Organization of a 2D Lattice on a Surface of Ge Single Crystal After Irradiation with Nd:YAG Laser. Microelectronics Journal, 2008, Vol.39, Iss.2, 237.-240.lpp. ISSN 0026-2692. Pieejams: doi:10.1016/j.mejo.2007.05.006

Publikācijas valoda
English (en)
RTU Zinātniskā bibliotēka.
E-pasts: uzzinas@rtu.lv; Tālr: +371 28399196