Dynamics of Nanostructure Formation Using Point Defects on Semiconductors by Laser Radiation
Extended Defects in Semiconductors: Program and Abstracts 2008
Jānis Barloti, Edvīns Daukšta, D. Grabovskis, Artūrs Medvids, Pāvels Onufrijevs, Artūrs Plūdons, A. Ulyashin

Dynamics of nanostructures (nanocones and nanocavties) formation on surface of semiconductors by laser radiation based on Thermogradient effect (TGE) is studied. Nanostructures formation of both nanohills and nanocavities are explained by point defects redistribution in gradient of temperature at the irradiated surface. Study of photoluminescence (PL), atomic force mi-croscopy (AFM) and Raman back-scattering spectra speak in favour of presence of quantum confinement effect (QCE) on the top of nanocones on the irradiated surface of semiconductor single crystals. Aggregation of vacancies under the irradiated sur-face forms nanocavities.


Atslēgas vārdi
Nanostructure, Point Defects, Laser Radiation

Barloti, J., Daukšta, E., Grabovskis, D., Medvids, A., Onufrijevs, P., Plūdons, A., Ulyashin, A. Dynamics of Nanostructure Formation Using Point Defects on Semiconductors by Laser Radiation. No: Extended Defects in Semiconductors: Program and Abstracts, Francija, Poitiers , 14.-19. septembris, 2008. Poitiers: Université de Poitiers, 2008, 6.-6.lpp.

Publikācijas valoda
English (en)
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