According to the effect, the interstitial atoms of Cd (Cdi) in Cd1-xZnxTe move along the tempera-ture gradient while the Cd vacancies (VCd) and Zn atoms – in the opposite direction, into the bulk of the semiconductor where temperature is lower. Photoluminescence spectra studied at 5 K show that concentration of Cd atoms increases, but concentration of Zn atoms decreases at the surface due to redistribution atoms in temperature gradient of field. Formation of a graded band gap in Cd1-xZnxTe crystal at irradiation by the second harmonic of Nd:YAG laser is found.