Laser-Induced Self-Organization of Nano-Wires on SiO2/Si Interface
Microelectronics Journal 2009
Artūrs Medvids, Igor Dmitruk, Pāvels Onufrijevs, Iryna Pundyk

Original observation of new graded band gap structures formed on the surface of elementary Si semiconductor at studying the optical properties of Si nano-hills formed at the SiO2/Si interface by pulsed Nd:YAG laser irradiation is reported. The self-organized nano-hills on Si surface are characterized by a strong photoluminescence in the visible range of spectrum with a shoulder extended to the long-wave part of the spectrum. The feature is explained by the quantum confinement effect in nano-hills-nano-wires of gradually changing diameter.


Atslēgas vārdi
AFM, Graded band gap Si, Laser radiation, Nano-hills, Photoluminescence, SiO2/Si
DOI
10.1016/j.mejo.2008.06.073
Hipersaite
http://www.sciencedirect.com/science/article/pii/S0026269208002541

Medvids, A., Dmitruk, I., Onufrijevs, P., Pundyk, I. Laser-Induced Self-Organization of Nano-Wires on SiO2/Si Interface. Microelectronics Journal, 2009, Vol.40, Iss.3, 449.-451.lpp. ISSN 0026-2692. Pieejams: doi:10.1016/j.mejo.2008.06.073

Publikācijas valoda
English (en)
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