Formation of p-n Junction in ITO/P-Si Structure by Nd:YAG Laser Radiation for Solar Cells Application

Radiation Interaction with Material and Its Use in Technologies 2010 : 3rd International Conference : Program and Materials 2010
Artūrs Medvids, Pāvels Onufrijevs, Edvīns Daukšta, Linda Blumbeka, Jānis Barloti, Aleksandr Ulyashin, I Dmytruk, Irina Pundyk

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Atslēgas vārdi
ito, Nano-cones, nanostructures, laser, semiconductors, solar sells

Medvids, A., Onufrijevs, P., Daukšta, E., Blumbeka, L., Barloti, J., Ulyashin, A., Dmytruk, I., Pundyk, I. Formation of p-n Junction in ITO/P-Si Structure by Nd:YAG Laser Radiation for Solar Cells Application. No: Radiation Interaction with Material and Its Use in Technologies 2010 : 3rd International Conference : Program and Materials, Lietuva, Kaunas, 20.-23. septembris, 2010. Kaunas: Technologija, 2010, 208.-211.lpp. ISSN 1822-508X.

Publikācijas valoda
English (en)