Nano-Cones Formation on a Surface of Semiconductors: Si,Ge, Si1-xGex , GaAs and CdZnTe Layers by Laser Radiation

11th International Young Scientists Conference (SPO 2010) 2010
Artūrs Medvids

.A new laser method elaborated for a cone like nanostructure formation on a surface of semiconductors is reported. Diameter of the nano-cone is increased gradually from top of cone till a substrate. Such structure has qualitative new properties in comparison with QWs and QDs. For example, nano-cone with gradually changed diameter is gradient band gap structure. Model of the nanostructures growth and optical properties of nano-cones are proposed.

Atslēgas vārdi
radiation, cdznte, GaAs, Si, Ge, SiGe, semiconductor, laser, nanostrusture, nanotechnology

Medvids, A. Nano-Cones Formation on a Surface of Semiconductors: Si,Ge, Si1-xGex , GaAs and CdZnTe Layers by Laser Radiation. No: 11th International Young Scientists Conference (SPO 2010), Ukraina, Kyiv, 21.-24. oktobris, 2010. Kyiv: Taras Shevchenko National University of Kyiv, 2010, 28.-29.lpp.

Publikācijas valoda
English (en)