Nano-Cones Formation on a Surface of Semiconductors: Si,Ge, Si1-xGex , GaAs and CdZnTe Layers by Laser Radiation

Abstracts of 14th International Symposium on Ultrafast Phenomena in Semiconductors 2010
Artūrs Medvids

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Atslēgas vārdi
radiation, cdznte, GaAs, Si, Ge, SiGe, semiconductor, laser, nanostrusture, nanotechnology

Medvids, A. Nano-Cones Formation on a Surface of Semiconductors: Si,Ge, Si1-xGex , GaAs and CdZnTe Layers by Laser Radiation. No: Abstracts of 14th International Symposium on Ultrafast Phenomena in Semiconductors, Lietuva, Vilnius, 23.-25. augusts, 2010. Riga: University of Latvia, 2010, 12.-12.lpp.

Publikācijas valoda
English (en)