P-n Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells Applications

The 9th International Conference on Global Research and Education: Inter Academia 2010: Digest 2010
Artūrs Medvids, Pāvels Onufrijevs, Edvīns Daukšta, L Blumbrka, Jānis Barloti, A Ulyashin, I Dmytruk, I Pundyk

The research report is devoted to the development of a new method of nanostructures formation in ITO/p-Si/Al structure with powerful laser radiation and study of its optical and electrical properties for solar cells applications. It was showed that after the structure irradiation by Nd:YAG laser second harmonic, dark current voltage characteristics become diode-like. Increase of ITO/p-Si/Al structure power after irradiation by laser, using photocurrent voltage characteristic method, was shown.

Atslēgas vārdi
P-n junction, ITO/p-Si, laser radiation, solar cells

Medvids, A., Onufrijevs, P., Daukšta, E., Blumbrka, L., Barloti, J., Ulyashin, A., Dmytruk, I., Pundyk, I. P-n Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells Applications. No: The 9th International Conference on Global Research and Education: Inter Academia 2010: Digest, Latvija, Riga, 9.-12. augusts, 2010. Riga: RTU Publishing House, 2010, 270.-271.lpp. ISBN 978-9934-10-046-8.

Publikācijas valoda
English (en)