Characterization of Optical and Photoelectrical Properties of ZnO Crystals

Acta Physica Polonica A 2011
Pāvels Onufrijevs, T Serevicius, P. Scajev, G Manolis, Artūrs Medvids, L Chernyak, E Kuokstis, C Yang, K Jarasiunas

We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination.

Atslēgas vārdi
Photoelectrical Properties, ZnO, stimulated emission
Hipersaite
http://przyrbwn.icm.edu.pl/APP/PDF/119/a119z2p57.pdf

Onufrijevs, P., Serevicius, T., Scajev, P., Manolis, G., Medvids, A., Chernyak, L., Kuokstis, E., Yang, C., Jarasiunas, K. Characterization of Optical and Photoelectrical Properties of ZnO Crystals. Acta Physica Polonica A, 2011, Vol.119, Iss.2, 274.-276.lpp. ISSN 0587-4246.

Publikācijas valoda
English (en)