Nano-Cones Formed on a Surface of Semiconductors by Laser Radiation: Technology, Model and Properties

30th International Conference on the Physics of Semiconductors 2010
Artūrs Medvids, Pāvels Onufrijevs

The new laser method for nano structures formation on a surface of semiconductors Si, Ge, GaAs and SiGe, CdZnTe solid solutions is proposed. For the first time was shown the possibility of graded band gap structure formation in elementary semiconductors. Thermogradient effect has a main role in initial stage of nano-cones and graded band gap structure formation by laser radiation in semiconductors.

Atslēgas vārdi
Nano-cones, nanostructures, laser, semiconductors, nanotechnology, SiGe

Medvids, A., Onufrijevs, P. Nano-Cones Formed on a Surface of Semiconductors by Laser Radiation: Technology, Model and Properties . No: 30th International Conference on the Physics of Semiconductors, Korejas republika, Seoul, 25.-30. jūlijs, 2010. Seoul: ICPS, 2010, 719.-719.lpp.

Publikācijas valoda
English (en)