Hydrogen Interaction with Point Defects in the Si-SiO2 Structures and Its Influence on the Interface Properties

Solid Stale Phenomena 2008
U. Abru, I. Heinmaa, T. Kärner, D. Kropman, T. Laas, Artūrs Medvids, E. Mellikov, U. Ugaste

Abstract. The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: temperature; cooling rate, oxidation time, impurity content. Interaction between the point defects with extended defects and impurities affects the SiO2 structure and Si-SiO; interface properties. Hydrogen adsorption on n- and p- type wafers is different. One possible reason for that can be the strength of the magnetic interaction between the hydrogen and paramagnetic impurities of the adsorbent. The influence of point defects and impurities may be diminished and the interface properties improved by an appropriate choice of the oxidation conditions and postoxidation laser irradiation.

Keywords
Si-SiO2 interface, EPR, NMR, surface photovoltage
DOI
10.4028/www.scientific.net/SSP.131-133.345
Hyperlink
http://www.scientific.net/SSP.131-133.345

Abru, U., Heinmaa, I., Karner, T., Kropman, D., Laas, T., Medvids, A., Mellikov, E., Ugaste, U. Hydrogen Interaction with Point Defects in the Si-SiO2 Structures and Its Influence on the Interface Properties. Solid Stale Phenomena, 2008, Vol.131-133, pp.345-349. ISSN 1662-9779. Available from: doi:10.4028/www.scientific.net/SSP.131-133.345

Publication language
English (en)