Strain Relaxation Mechanism in the Si-Sio2 System and Its Influence on the Interface Properties

International Conference Radiation Interaction with Material and Its Use in Technologies 2008: Program and Materials 2008
I Heinmaa, T. Kärner, D. Kropman, T. Laas, K. Lott, Artūrs Medvids, E. Mellikov, A. Opik, O. Volobueva

The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stresses relaxation mechanism depended on the oxidation condition: temperature, cooling rate, oxide thickness. The stresses relaxation by the strain occur due to the opposite sign of the thermal expansion coefficient of Si-SiO2 and Si3N4 on Si in the Si-SiO2-Si3N4 system. Laser irradiation allows to modify the system stresses.

Atslēgas vārdi
STRAIN RELAXATION, Si-SiO2 SYSTEM, INTERFACE

Heinmaa, I., Karner, T., Kropman, D., Laas, T., Lott, K., Medvids, A., Mellikov, E., Opik, A., Volobueva, O. Strain Relaxation Mechanism in the Si-Sio2 System and Its Influence on the Interface Properties. No: International Conference Radiation Interaction with Material and Its Use in Technologies 2008: Program and Materials, Lietuva, Kaunas, 24.-27. septembris, 2008. Kaunas: Kaunas University of Technology, 2008, 204.-207.lpp.

Publikācijas valoda
English (en)